Magnetron sputtering coating is a new type of physical vapor deposition method, which uses an electron gun system to emit and focus electrons on the material to be plated,so that the sputtered atoms follow the momentum conversion principle to remove the material with higher kinetic energy.Fly to the substrate to deposit a film.This plated material is called a Sputtering Target. The sputtering target has a metal, an alloy, a ceramic compound, and so on.
The requirements for sputtering targets are higher than those of traditional materials.General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size and defect control;higher requirements or special requirements Requirements include: surface roughness, resistance, grain size uniformity, composition and tissue uniformity, foreign matter (oxide) content and size, magnetic permeability, ultra-high density and ultra-fine grains.
Magnetron sputtering targets classification:
Ceramic sputtering targets,Fluoride ceramic sputtering target,germanide ceramic sputtering targets, other ceramic targets, chromium-doped Silicon ceramic target (Cr-SiO), indium phosphide target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).
According to the shape, it can be divided into Square targets, Round targets, and الهدف الاخرق الروتاري
According to the composition, it can be divided into metal target, alloy target, and ceramic compound sputtering targets.
According to different applications, it is divided into semiconductor-related ceramic targets, recording medium ceramic targets, display ceramic targets, superconducting ceramic targets, giant magnetoresistance ceramic targets, etc.
According to the application field, it is divided into microelectronic sputtering targets, magnetic recording target, optical disk target, precious metal sputtering targets, thin film resistive sputtering targets, conductive film target, surface modified target, mask layer target, decorative layer target, Electrode sputtering targets, package sputtering targets, other sputtering targets.
Magnetron sputtering principle: an orthogonal magnetic field and an electric field are applied between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is charged in the high vacuum chamber, and the permanent magnet is at the target.
The surface of the material forms a magnetic field of 250 to 350 Gauss, which forms an orthogonal electromagnetic field with the high voltage electric field. Under the action of electric field, Ar gas is ionized into positive ions and electrons, and a certain negative high voltage is applied to the target.
The electrons emitted from the target are affected by the magnetic field and the ionization probability of the working gas increases, forming a high-density plasma near the cathode.Body, Ar ion accelerates to the target surface under the action of Lorentz force, bombards the target surface at a high speed, so that the sputtered atoms on the target follow the momentum conversion principle and fly away from the target surface with higher kinetic energy.
The substrate is deposited into a film. Magnetron sputtering is generally divided into two types: branch sputtering and RF sputtering. The principle of the branch sputtering equipment is simple, and the rate is also fast when sputtering metal.
The use of RF sputtering is more extensive. In addition to sputterable conductive materials, non-conductive materials can be sputtered. At the same time, reactive sputtering is used to prepare compound materials such as oxides, nitrides and carbides.
If the frequency of the radio frequency is increased, it becomes microwave plasma sputtering, and electron cyclotron resonance (ECR) type microwave plasma sputtering is commonly used.