A method of producing ITO target with homogeneous nano-ITO powder

ITO target preparation method, take 4 ~ 5N purity of the metal indium or tin, according to In2O3: SnO2 = 9:1 proportion of the ingredients add the ingredients in the melting device, ohmic heating 250 500 ℃ for melting. Then pressed into the reactor and add 50 ~ 1000V Voltage ,50-1000A current, which leads to nitrogen-oxygen mixed gas or pure oxygen, rapid cooling by cold air or liquid nitrogen to form a complete solution to the tin oxide indium oxide lattice of the single-phase nano-ITO powder. 20MPa pressure in the dry pressed billet and the pressure at 200 ~ 300MPa cold isostatic pressing under the green body made of ITO, ITO green body and then into the high-temperature oxygen atmosphere sintering furnace, and pass into the pure oxygen, under pressure 0.1 ~ 1.0MPa The atmospheric pressure and 1450 ~ 1650 ℃ high temperature sintering 6 ~ 40h are fired into the ITO target. High purity, high crystallinity, dispersion, and liquidity.