|Product name : Silicon Nitride sputtering target, Silicon Nitride target, Si3N4 target, Si3N4 sputtering target|
|Item : Silicon Nitride sputtering target, Silicon Nitride|
Silicon Nitride sputtering target, Silicon Nitride target, Si3N4 target, Si3N4 sputtering target
Element: Silicon Nitride
Name: Silicon Nitride sputtering target, Silicon Nitride target, Si3N4 target, Si3N4 sputtering target
Purity: 99.9 – 99.999%
Target Shape: plate, wafer, rectangular, square, circle, tube, step wafer, step rectangle, and customer tailored.
To provide specifications of aluminum target supporter, mammography supporter, copper target supporter, Titanium target supporter.
Target metallization services
Target bonding services.
Silicon nitride ceramic material with high thermal stability, oxidation resistance, and product size and high accuracy excellent performance. Because silicon nitride is a covalent bond strength and high compound, and oxides in the air can form protective film, it also has good chemical stability, 1200 ℃ the following is not oxidized, 1200 ~ 1600 ℃ generate protective film to prevent further oxidation, and is not aluminum, lead, tin, silver, brass, nickel, a variety of molten metal or alloy by infiltration or corrosion, but can be magnesium, nickel-chromium alloy, stainless steel melt by corrosion. Silicon nitride ceramic materials for high temperature engineering components, metallurgical industry and other aspects of advanced refractory materials, chemical industry, corrosion-resistant parts and sealing components, machining and cutting tool industries and so on. Because silicon nitride and silicon carbide, alumina, thorium dioxide, boron nitride, etc. can form a strong combination, it can be used as binding material was modified with different ratios. In addition, silicon nitride can be applied to thin film solar cells. PECVD silicon nitride film plated with, not only can be used as antireflection coating can reduce reflection of incident light, and, in the silicon nitride deposition process, the reaction products of hydrogen atoms into the silicon nitride film and silicon, the defects play a passive role.