Sputtering targets for Semiconductors

Material

Name

Composition [wt%]

Purity

Ag

Silver

100%

3N7, 4N, 5N

Al

Aluminium

100%

5N, 5N5

AlSi

Aluminium Silicon

various

5N, 5N5

AlSiCu

Aluminium Silicon Copper

various

5N, 5N5

Au

Gold

100%

4N, 5N

AuAs

Gold Arsenic

AuAs0,4

4N, 5N

AuGe

Gold Germanium

AuGe12

4N, 5N

AuPt

Gold Platinum

various

4N

AuSb

Gold Antimon

AuSb0,5 (30)

4N, 5N

AuSn

Gold Tin

AuSn20 (25, 30)

4N, 5N

AuZn

Gold Zinc

AuZn2 (5)

4N

CoFeB

Cobalt Iron Boron

various

4N, 4N5

Cr

Chromium

100%

3N, 3N5

CrNiAl

Chromium Nickel Aluminium

various

3N, 3N5

CrSi

Chromium Silicon

CrSi50

3N

Cu

Copper

100%

4N5, 5N

CuCr

Copper Chromium

CuCr50

3N5

CuNi

Copper Nickel

various

3N5

Hf

Hafnium

100%

3N (excl. Zr)

Ir

Iridium

100%

3N

Mo

Molybdenum

100%

3N5

MoSi

Molybdenum Silicon

100%

3N5

Ni

Nickel

100%

3N5

NiAl

Nickel Aluminium

various

3N5, 3N8

NiCr

Nickel Chromium

various

3N, 3N5

NiCrAl

Nickel Chromium Aluminium

various

3N, 3N5

NiCrAlSi

Nickel Chromium Aluminium Silicon

20%

3N, 3N5

NiCrSi

Nickel Chromium Silicon

100%

3N, 3N5

NiPt

Nickel Platinum

various

3N

NiV

Nickel Vanadium

NiV7

3N5

OsRu

Osmium Ruthenium

OsRu20%

3N5

Pd

Palladium

100%

3N5, 4N

Pt

Platinum

100%

3N5, 4N

Ru

Ruthenium

100%

2N8, 3N, 3N8

Si

Silicon

100%

5N

Ta

Tantalum

100%

3N5

TaAl

Tantalum Aluminium

various

3N5

TaSi

Tantalum Silicon

100%

3N, 4N, 4N5, 5N

Ti

Titanium

100%

3N, 4N, 4N5, 5N

TiW

Titanium Tungsten

TiW10

4N5

W

Tungsten

100%

3N5

WSi

Tungsten Silicon

TiW10

4N5