ITO sputtering target

chemical composition:

97 wt% In2O3,3 wt%SnO2,purity:99.99% relative density:>99%, actual density: ≥6.88g/cm3

95 wt% In2O3,5 wt%SnO2,purity:99.99% relative density:>99%, actual density: ≥7.05 g/cm3

90 wt% In2O3,10 wt%SnO2 purity:99.99% relative density:>99%, actual density: ≥7.06g/cm3

or in accordance with customer’s request;

membrane resistance: RF magnetic control, substrate heating temperature 220℃,

Shape: plate,tube.

Size: in accordance with customer’s request

We provide high-purity sputtering targets and vapor deposition materials in shapes and sizes to suit every application.